CS5N90A4R Datasheet - CR Micro

CS5N90A4R Silicon N-Channel Power MOSFET

CS5N90 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS5N90A4R Features

* l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 30.1nC) l Low Reverse transfer capacitances(Typical:6.4pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 900 V 5 A 180 W 2.2 Ω Applications： Power switch circuit of adaptor and cha

CS5N90A4R-CRMicro.pdf