CS5N90A8R Datasheet - CR Micro

CS5N90A8R Silicon N-Channel Power MOSFET

VDSS 900 CS5N90 A8R, the silicon N-channel Enhanced ID 5 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 180 which reduce the conduction loss, improve switching RDS(ON)Typ 2.2 performance and enhance the avalanche energy. The transistor can be used in various powe.

CS5N90A8R Features

* l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 30.1nC) l Low Reverse transfer capacitances(Typical:6.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol P

CS5N90A8R-CRMicro.pdf