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CS5N90A4RZ-G Datasheet - CR Micro

CS5N90A4RZ-G Silicon N-Channel Power MOSFET

CS5N90 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS5N90A4RZ-G Features

* Fast Switching

* Low ON Resistance(Rdson≤2.5Ω)

* Low Gate Charge (Typical Data: 30.1nC)

* Low Reverse transfer capacitances(Typical:6.4pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（TJ

CS5N90A4RZ-G Datasheet (831.54 KB)