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CS5N20FA9 Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS5N20FA9 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:7nC) l Low Reverse transfer capacitances(Typical:8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of Video doorphone. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS5N20FA9 General Description

VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 20 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω performance and enhance the avalanche energy. The transistor can be used in va.

CS5N20FA9 Datasheet (612.45 KB)

Preview of CS5N20FA9 PDF

Datasheet Details

Part number:

CS5N20FA9

Manufacturer:

Huajing Microelectronics

File Size:

612.45 KB

Description:

Silicon n-channel power mosfet.

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CS5N20FA9 Silicon N-Channel Power MOSFET Huajing Microelectronics

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