Datasheet4U Logo Datasheet4U.com

CS5N20FA9 Datasheet - Huajing Microelectronics

CS5N20FA9 Silicon N-Channel Power MOSFET

VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 20 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω performance and enhance the avalanche energy. The transistor can be used in va.

CS5N20FA9 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:7nC) l Low Reverse transfer capacitances(Typical:8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of Video doorphone. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS5N20FA9-HuajingDiscreteDevices.pdf

Preview of CS5N20FA9 PDF
CS5N20FA9 Datasheet Preview Page 2 CS5N20FA9 Datasheet Preview Page 3

Datasheet Details

Part number:

CS5N20FA9

Manufacturer:

Huajing Microelectronics

File Size:

612.45 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS5N20A3 Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS5N20A4 Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS5N06AE-1 Silicon N-Channel Power MOSFET (CR Micro)

CS5N10A23-G Silicon N-Channel Power MOSFET (CR Micro)

CS5N10AE-G-1 Silicon N-Channel Power MOSFET (CR Micro)

CS5N10AQ2-G-1 Silicon N-Channel Power MOSFET (CR Micro)

CS5N50A8R Silicon N-Channel Power MOSFET (CR Micro)

CS5N50FA9R Silicon N-Channel Power MOSFET (CR Micro)

TAGS

CS5N20FA9 CS5N20FA9 Silicon N-Channel Power MOSFET Huajing Microelectronics

CS5N20FA9 Distributor