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CS5N10AE-G-1 Datasheet - CR Micro

CS5N10AE-G-1 Silicon N-Channel Power MOSFET

CS5N10 AE-G-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.

CS5N10AE-G-1 Features

* Fast Switching

* Low ON Resistance(Rdson≤67 mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. 100 V 4.4 A 2.4 W 54 mΩ Absolute（TA= 25℃ unles

CS5N10AE-G-1-CRMicro.pdf

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Datasheet Details

Part number:

CS5N10AE-G-1

Manufacturer:

CR Micro

File Size:

802.75 KB

Description:

Silicon n-channel power mosfet.

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CS5N10AE-G-1 CS5N10AE-G-1 Silicon N-Channel Power MOSFET CR Micro

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