* Package
* 3rd generation SiC MOSFET technology
* Low impedance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0350120J Datasheet (910.04 KB)
C3M0350120J
CREE
910.04 KB
Silicon carbide power mosfet.
VDS
1200 V
C3M0350120J
ID @ 25˚C
7.2 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
350 mΩ
N-Channel Enhancement Mode .
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