C3M0350120J Datasheet - CREE

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C3M0350120J Silicon Carbide Power MOSFET

VDS 1200 V C3M0350120J ID @ 25˚C 7.2 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 350 mΩ N-Channel Enhancement Mode .

C3M0350120J-CREE.pdf

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Datasheet Details

Part number:

C3M0350120J

Manufacturer:

CREE

File Size:

910.04 KB

Description:

Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* Low impedance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* TAB Drain 1 2 34 5 6 7 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7)
* Renewable energy
* High voltage DC/DC converters
* Switch Mode Power Supplies
* UPS Part Number C3M0350120J Package TO-263-7 Marking C3M03501

C3M0350120J Distributors

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C3M0350120J Silicon Carbide Power MOSFET CREE

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