C3M0350120J Datasheet, Mosfet, CREE

C3M0350120J Features

  • Mosfet Package
  • 3rd generation SiC MOSFET technology
  • Low impedance package with driver source pin
  • 7mm of creepage distance between drain and source

PDF File Details

Part number:

C3M0350120J

Manufacturer:

CREE

File Size:

910.04kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet.

Datasheet Preview: C3M0350120J 📥 Download PDF (910.04kb)
Page 2 of C3M0350120J Page 3 of C3M0350120J

C3M0350120J Application

  • Applications TAB Drain 1 2 34 5 6 7 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7)
  • Renew

TAGS

C3M0350120J
Silicon
Carbide
Power
MOSFET
CREE

📁 Related Datasheet

C3M0350120D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0350120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM Silicon Carbide (SiC) MOSFET technology •.

C3M0350120J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0350120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • 3rd generation Silicon Carbide (Si.

C3M0015065D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0015065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blo.

C3M0015065K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0015065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM SiC MOSFET technology • Optimized package.

C3M0016120D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0016120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM Silicon Carbide (SiC) MOSFET technology .

C3M0016120D - Silicon Carbide Power MOSFET (CREE)
VDS 1200 V C3M0016120D ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode.

C3M0016120K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0016120K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optim.

C3M0016120K - Silicon Carbide Power MOSFET (CREE)
VDS 1200 V C3M0016120K ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode.

C3M0016120K1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0016120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO.

C3M0021120D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0021120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High bl.

Stock and price

part
Wolfspeed
SICFET N-CH 1200V 7.2A TO263-7
DigiKey
C3M0350120J
989 In Stock
Qty : 500 units
Unit Price : $3.85
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts