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C3M0350120J - Silicon Carbide Power MOSFET

CREE

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Datasheet Details

Part number	C3M0350120J
Manufacturer	CREE
File Size	910.04 KB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0350120J-CREE.pdf

C3M0350120J Product details

Features

Package.
3rd generation SiC MOSFET technology.
Low impedance package with driver source pin.
7mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.

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Published: Nov 20, 2024 |