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CS65N25ANR Silicon N-Channel Power MOSFET

CS65N25ANR Description

Silicon N-Channel Power MOSFET ○R CS65N25 ANR General .
VDSS 250 CS65N25 ANR, the silicon N-channel Enhanced ID 65 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 420 which.

CS65N25ANR Features

* Fast Switching
* Low ON Resistance(Rdson≤50mΩ)
* Low Gate Charge (Typical Data:90.1nC)
* Low Reverse transfer capacitances(Typical:44 pF)

CS65N25ANR Applications

* Power switch circuit of electron ballast and adaptor. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS Drain-to-Source Voltage 250 ID IDMa1 VGS EAS a2 dv/dt a3 Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Ga

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Datasheet Details

Part number
CS65N25ANR
Manufacturer
CR Micro
File Size
570.93 KB
Datasheet
CS65N25ANR-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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