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CTL0343NS-R3 N-Channel MOSFET

CTL0343NS-R3 Description

CTL0343NS-R3 N-Channel Enhancement MOSFET .
The CTL0343NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

CTL0343NS-R3 Features

* Drain-Source Breakdown Voltage VDSS -20 V
* Drain-Source On-Resistance RDS(ON) 58m, at VGS= 10V, ID= 3.4A RDS(ON) 66m, at VGS= 4.5V, ID= 2.7A RDS(ON) 88m, at VGS= 2.5V, ID= 1.0A
* Continuous Drain Current at TC=25℃ID = -3.1A
* Advanced high cell density Trench Technology
* R

CTL0343NS-R3 Applications

* Power Management
* Lithium Ion Battery Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Nov, 2013 CTL0343NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage

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Datasheet Details

Part number
CTL0343NS-R3
Manufacturer
CT Micro
File Size
1.02 MB
Datasheet
CTL0343NS-R3-CTMicro.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CT Micro
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