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BTD1805BT3 Low Vcesat NPN Epitaxial Planar Transistor

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Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Spec.No.: C820T3 Issued Date : 2007.07.09 Revised Date : Page No.:.
The device is manufactured in NPN planar technology by using a “Base Island” layout.

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Datasheet Specifications

Part number
BTD1805BT3
Manufacturer
CYStech
File Size
146.66 KB
Datasheet
BTD1805BT3-CYStech.pdf
Description
Low Vcesat NPN Epitaxial Planar Transistor

Features

* Very low collector-to-emitter saturation voltage
* Fast switching speed
* High current gain characteristic
* Large current capability

Applications

* CCFL drivers
* Voltage regulators
* Relay drivers
* High efficiency low voltage switching applications Symbol BTD1805BT3 Outline TO-126 B:Base C:Collector E:Emitter BTD1805BT3 BCE CYStek Product Specification CYStech Electronics Corp. Spec. No. : C820T3 Issue

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