BTD1805J3 Low Vcesat NPN Epitaxial Planar Transistor

Cystech Electonics

Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD1805J3 BVCEO IC RCESAT Spec.No.: C820J3 Issued Date : 2004.12.19 Revised .
The device is manufactured in NPN planar technology by using a “Base Island” layout.

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Datasheet Specifications

Part number: BTD1805J3
Manufacturer: Cystech Electonics
File Size: 297.73 KB
Datasheet: BTD1805J3_CystechElectonics.pdf
Description: Low Vcesat NPN Epitaxial Planar Transistor

Features

* Very low collector-to-emitter saturation voltage
* Fast switching speed
* High current gain characteristic
* Large current capability

Applications

* CCFL drivers
* Voltage regulators
* Relay drivers
* High efficiency low voltage switching applications Symbol BTD1805J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter BTD1805J3 B CE CYStek Product Specification CYStech Electronics Corp. Spec. No. : C820J3 I

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BTD1805J3 Low Vcesat NPN Epitaxial Planar Transistor Cystech Electonics

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