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BTD1805F3 Low Vcesat NPN Epitaxial Planar Transistor

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Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Spec.No.: C820F3 Issued Date : 2011.12.01 Revised Date : 2019.11.26 .
The device is manufactured in NPN planar technology by using a “Base Island” layout.

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Datasheet Specifications

Part number
BTD1805F3
Manufacturer
CYStech
File Size
481.95 KB
Datasheet
BTD1805F3-CYStech.pdf
Description
Low Vcesat NPN Epitaxial Planar Transistor

Features

* Very low collector-to-emitter saturation voltage
* Fast switching speed
* High current gain characteristic
* Large current capability

Applications

* CCFL drivers
* Voltage regulators
* Relay drivers
* High efficiency low voltage switching applications Ordering Information Device BTD1805F3-0-T7-X Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S

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