MTBA5A10Q8 Dual N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No.: 1/8 Dual N-Channel Logic Level Enhancemen.
The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effective.

📥 Download Datasheet

MTBA5A10Q8 Datasheet Preview — Preview of MTBA5A10Q8 PDF

Datasheet Specifications

Part number: MTBA5A10Q8
Manufacturer: CYStech
File Size: 312.79 KB
Datasheet: MTBA5A10Q8-CYStech.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)=150mΩ(max. )@VGS=10V, ID=2.5A
* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Dual N-ch MOSFET package
* Pb-free lead plating & Halogen-free package Equivalent Circuit MTBA5A10Q8 Outline SOP-8 G：Gate S：Source D：Drai

MTBA5A10Q8 Distributors

📁 Related Datasheet

MTBA0N10KJ3 MTBA6C12H8 MTBA6C15H8 MTB MTB-F000329MNHNAA-B MTB-F000368MNHNAA

📌 All Tags

MTBA5A10Q8 Dual N-Channel Enhancement Mode Power MOSFET CYStech

CYStech MTBA5A10Q8-like datasheet