* RDS(ON)=150mΩ(max.)@VGS=10V, ID=2.5A
* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Dual N-ch MOSFET package
* Pb-free lead plating & Halogen-free package Equivalent Circuit MTBA5A10Q8 Outline SOP-8 G：Gate S：Source D：Drai
MTBA5A10Q8 Datasheet (312.79 KB)
MTBA5A10Q8
CYStech
312.79 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 1/8 Dual N-Channel Logic Level Enhancemen.
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