MTBA6C15H8 P- & N-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Description

CYStech Electronics Corp.Spec.No.: C938H8 Issued Date : 2016.09.06 Revised Date : 2018.04.16 Page No.: 1/14 N- And P-Channel Enhancement Mode MO.

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Datasheet Specifications

Part number: MTBA6C15H8
Manufacturer: CYStech Electronics
File Size: 815.08 KB
Datasheet: MTBA6C15H8-CYStechElectronics.pdf
Description: P- & N-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package N-CH 150V 2.4A 6.8A 172mΩ 178mΩ P-CH -150V -2.0A -5.8A 257mΩ 275mΩ Equivalent Circuit MTBA6C15H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate S：Source D：Dr

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MTBA6C15H8 N-Channel Enhancement Mode Power MOSFET CYStech Electronics

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