* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 120V 2.2A 6.3A 186mΩ 196mΩ P-CH
MTBA6C12H8 Datasheet (930.78 KB)
MTBA6C12H8
Cystech Electonics
930.78 KB
N- and p-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C973H8 Issued Date : 2016.07.06 Revised Date : Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTBA6C.
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