MTBA6C12H8 Datasheet - Cystech Electonics

MTBA6C12H8 N- and P-channel enhancement mode power MOSFET

MTBA6C12H8 Features

* Simple drive requirement

* Low on-resistance

* Fast switching speed

* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 120V 2.2A 6.3A 186mΩ 196mΩ P-CH

MTBA6C12H8 Datasheet (930.78 KB)

MTBA6C12H8 Datasheet Preview — Preview of MTBA6C12H8 PDF

Datasheet Details

Part number:

MTBA6C12H8

Manufacturer:

Cystech Electonics

File Size:

930.78 KB

Description:

N- and p-channel enhancement mode power mosfet.

📁 Related Datasheet

MTBA6C12J4 N & P-Channel Enhancement Mode Power MOSFET (CYStech)

MTBA6C12Q8 N & P-Channel Enhancement Mode Power MOSFET (CYStech)

MTBA6C15H8 P- & N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)

MTBA6C15J4 N & P-Channel Enhancement Mode Power MOSFET (CYStech)

MTBA6C15Q8 N & P-Channel Enhancement Mode Power MOSFET (CYStech)

MTBA0N10KJ3 N-Channel Enhancement Mode MOSFET (Cystech Electonics)

MTBA0N10Q8 N-Channel Enhancement Mode Power MOSFET (CYStech)

MTBA5A10Q8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)

TAGS

MTBA6C12H8 and P-channel enhancement mode power MOSFET Cystech Electonics

MTBA6C12H8 Distributor