MTBA6C12H8 - N- and P-channel enhancement mode power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTBA6C12H8
Manufacturer	Cystech Electonics
File Size	930.78 KB
Description	N- and P-channel enhancement mode power MOSFET
Datasheet	MTBA6C12H8-CystechElectonics.pdf

Simple drive requirement.
Low on-resistance.
Fast switching speed.
Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 120V 2.2A 6.3A 186mΩ 196mΩ P-CH -120V -1.9A -5.4A 255mΩ 285mΩ Equivalent Circuit MTBA6C12H8 Outline Pin 1 DFN5×6 G：Gate S：Source D：Drain Ordering Information Device MTBA6C12H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating & h.

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Published: Sep 4, 2016 |