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MTBA6C12H8 N- and P-channel enhancement mode power MOSFET

MTBA6C12H8 Description

CYStech Electronics Corp.Spec.No.: C973H8 Issued Date : 2016.07.06 Revised Date : Page No.: 1/13 N- AND P-Channel Enhancement Mode MOSFET MTBA6C.

MTBA6C12H8 Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 120V 2.2A 6.3A 186mΩ 196mΩ P-CH

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Datasheet Details

Part number
MTBA6C12H8
Manufacturer
Cystech Electonics
File Size
930.78 KB
Datasheet
MTBA6C12H8-CystechElectonics.pdf
Description
N- and P-channel enhancement mode power MOSFET

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and P-channel enhancement mode power MOSFET Cystech Electonics
Cystech Electonics MTBA6C12H8-like datasheet