MTBA0N10KJ3 N-Channel Enhancement Mode MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTBA0N10KJ3 Spec.No.: C139J3 Issued Date : 2015.09.30 Revised Date : Page No.: 1.

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Datasheet Specifications

Part number: MTBA0N10KJ3
Manufacturer: Cystech Electonics
File Size: 442.38 KB
Datasheet: MTBA0N10KJ3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD Protected Gate
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.8A RDS(ON)@VGS=4.

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MTBA0N10KJ3 N-Channel Enhancement Mode MOSFET Cystech Electonics

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