* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD Protected Gate
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.8A RDS(ON)@VGS=4.
MTBA0N10KJ3 Datasheet (442.38 KB)
MTBA0N10KJ3
Cystech Electonics
442.38 KB
N-channel enhancement mode mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTBA0N10KJ3 Spec. No. : C139J3 Issued Date : 2015.09.30 Revised Date : Page No. : 1.
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