MTBA5N10J3 - N-Channel Enhancement Mode Power MOSFET

CYStech

Datasheet Details

Part number	MTBA5N10J3
Manufacturer	CYStech
File Size	252.71 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTBA5N10J3-CYStech.pdf

Low Gate Charge.
Simple Drive Requirement.
Pb-free lead plating & Halogen-free package RDSON(MAX) 150mΩ Equivalent Circuit MTBA5N10J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω Repetitive Avalan.

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Published: Apr 28, 2016 |