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MTBA5N10J3 N-Channel Enhancement Mode Power MOSFET

MTBA5N10J3 Description

CYStech Electronics Corp.Spec.No.: C731J3 Issued Date : 2009.07.07 Revised Date : Page No.: 1/7 N -Channel Logic Level Enhancement Mode Power MO.

MTBA5N10J3 Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package RDSON(MAX) 150mΩ Equivalent Circuit MTBA5N10J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Volta

MTBA5N10J3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTBA5N10J3 CYStek Product Specification

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Datasheet Details

Part number
MTBA5N10J3
Manufacturer
CYStech
File Size
252.71 KB
Datasheet
MTBA5N10J3-CYStech.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech
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