MTBA6C12J4 - N & P-Channel Enhancement Mode Power MOSFET

CYStech

Datasheet Details

Part number	MTBA6C12J4
Manufacturer	CYStech
File Size	365.70 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	MTBA6C12J4-CYStech.pdf

RDSON(typ. ) @VGS=(-)4.5V.
Low Gate Charge.
Simple Drive Requirement.
RoHS compliant & Halogen-free package N-CH 120V 2A 176 mΩ 183 mΩ P-CH -120V -1.6A 246 mΩ 276 mΩ Equivalent Circuit MTBA6C12J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 120 -120 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10.

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Published: Apr 28, 2016 |