MTBA6C12J4 N & P-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No.: 1/13 N & P-Channel Enhancement Mode Power.

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Datasheet Specifications

Part number: MTBA6C12J4
Manufacturer: CYStech
File Size: 365.70 KB
Datasheet: MTBA6C12J4-CYStech.pdf
Description: N & P-Channel Enhancement Mode Power MOSFET

Features

* RDSON(typ. ) @VGS=(-)4.5V
* Low Gate Charge
* Simple Drive Requirement
* RoHS compliant & Halogen-free package N-CH 120V 2A 176 mΩ 183 mΩ P-CH -120V -1.6A 246 mΩ 276 mΩ Equivalent Circuit MTBA6C12J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (

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MTBA6C12J4 P-Channel Enhancement Mode Power MOSFET CYStech

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