* Low gate charge
* Simple drive requirement
* Pb-free lead plating and halogen-free package ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.5V(-4.5V) N-CH 150V 2A 9.3A 167mΩ 172mΩ P-CH -150V -1.5A -7.1A 253mΩ 273mΩ Equivalent Circuit MTBA6C15J4 Outl
MTBA6C15J4 Datasheet (403.30 KB)
MTBA6C15J4
CYStech
403.30 KB
N & p-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C938J4 Issued Date : 2014.10.15 Revised Date : 2017.07.25 Page No. : 1/13 N & P-Channel Enhancement Mode Power.
📁 Related Datasheet
MTBA6C15H8 P- & N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTBA6C15Q8 N & P-Channel Enhancement Mode Power MOSFET (CYStech)
MTBA6C12H8 N- and P-channel enhancement mode power MOSFET (Cystech Electonics)
MTBA6C12J4 N & P-Channel Enhancement Mode Power MOSFET (CYStech)
MTBA6C12Q8 N & P-Channel Enhancement Mode Power MOSFET (CYStech)
MTBA0N10KJ3 N-Channel Enhancement Mode MOSFET (Cystech Electonics)
MTBA0N10Q8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTBA5A10Q8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTBA5C10AQ8 N & P-Channel Enhancement Mode Power MOSFET (CYStech)
MTBA5C10H8 N & P-Channel Enhancement Mode Power MOSFET (CYStech)
