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MTBA6C15J4 N & P-Channel Enhancement Mode Power MOSFET

MTBA6C15J4 Description

CYStech Electronics Corp.Spec.No.: C938J4 Issued Date : 2014.10.15 Revised Date : 2017.07.25 Page No.: 1/13 N & P-Channel Enhancement Mode Power.

MTBA6C15J4 Features

* Low gate charge
* Simple drive requirement
* Pb-free lead plating and halogen-free package ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.5V(-4.5V) N-CH 150V 2A 9.3A 167mΩ 172mΩ P-CH -150V -1.5A -7.1A 253mΩ 273mΩ Equivalent Circuit MTBA6C15J4 Outl

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Datasheet Details

Part number
MTBA6C15J4
Manufacturer
CYStech
File Size
403.30 KB
Datasheet
MTBA6C15J4-CYStech.pdf
Description
N & P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET CYStech
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