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MTA028P01V8 P-Channel Enhancement Mode Power MOSFET

MTA028P01V8 Description

CYStech Electronics Corp.P-Channel Enhancement Mode Power MOSFET MTA028P01V8 Spec.No.: C101V8 Issued Date : 2018.08.16 Revised Date : 2018.08.17 P.

MTA028P01V8 Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-4.5V ID@ TA=25C, VGS=-4.5V RDSON @VGS=-4.5V, ID=-10A RDSON @VGS=-2.5V, ID=-7A RDSON @VGS=-1.8V, ID=-5A -14V -20.8A -6.5A 22mΩ(typ. ) 28mΩ(typ

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Datasheet Details

Part number
MTA028P01V8
Manufacturer
CYStech Electronics
File Size
671.43 KB
Datasheet
MTA028P01V8-CYStechElectronics.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET CYStech Electronics
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