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MTP4435BV8 P-Channel Enhancement Mode Power MOSFET

MTP4435BV8 Description

CYStech Electronics Corp.Spec.No.: C107V8 Issued Date : 2016.02.17 Revised Date : Page No.: 1/9 P-Channel Enhancement Mode Power MOSFET MTP4435B.

MTP4435BV8 Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating package RDSON@VGS=-5V, ID=-7A -30V -10.5A -32.4A 12.6mΩ(typ. ) 16.9mΩ(typ. ) Equivalent Circuit MTP4435BV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Informati

MTP4435BV8 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP4435BV8 CYStek Product Specification

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Datasheet Details

Part number
MTP4435BV8
Manufacturer
CYStech Electronics
File Size
359.26 KB
Datasheet
MTP4435BV8-CYStechElectronics.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET CYStech Electronics
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