CPQ090 Datasheet - Central Semiconductor

CPQ090 Triac

PROCESS TRIAC CPQ090 4.0 Amp, 600 Volt TRIAC Chip www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,310 PRINCIPAL DEVICE TYPES 2N6075A CQ202-4MS CQ223-4M CQD-4M Glass Passivated Mesa 90 x 90 MILS 8.6 MILS ± 0.6 MILS 61 x 48 MILS 11 x 9.8 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 .

CPQ090_CentralSemiconductor.pdf