CPQ110 Datasheet - Central Semiconductor

CPQ110 Triac

Central www.DataSheet4U.com TM PROCESS CPQ110 Triac Semiconductor Corp. 8.0 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 110 MILS x 110 MILS 8.6 MILS ± 0.6 MILS 80 MILS x 35 MILS 37 MILS x 37 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 876 PRINCIPAL DEVICE TYPES CQ220-8B Series CQDD-8M Series BACKSIDE MT2 145 Adams Avenu.

CPQ110_CentralSemiconductor.pdf