CPQ166 Datasheet (centralsemi)

CPQ166, TRIAC

PROCESS CPQ166 TRIAC 25 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 373 PRINCIPAL DEVICE TYPES CQDD-25M Series CQ220-25M Series CQ220-25MFP Series GLASS PASSIVATED MESA 165 x 165 MILS 9.1 MILS ± 0.4 MILS 134 x 100 MILS 28 x 28 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å R1 (29-April 2010) w w w.

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