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CYT5551HCD ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS

CYT5551HCD Description

CYT5551HCD SURFACE MOUNT DUAL, ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS Central TM Semiconductor Corp..
The CENTRAL SEMICONDUCTOR CYT5551HCD type consists of two (2) isolated NPN high current silicon transistors packaged in an epoxy molded SOT-228 surfa.

CYT5551HCD Applications

* MARKING CODE: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W SYMBOL VCBO VCEO VEBO

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ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS Central Semiconductor
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