CTLDM8120-M832D SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Central Semiconductor

CTLDM8120-M832D Description

CTLDM8120-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for hig.

CTLDM8120-M832D Features

* ESD protection up to 2kV
* Low rDS(ON) (0.24Ω MAX @ VGS=1.8V)
* High current (ID=0.95A)
* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t

CTLDM8120-M832D Applications

* This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CFVS TLM832DS CASE APPLICATIONS:
* Switching Circuits
* DC-DC Converters

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CTLDM8120-M832D Datasheet Preview — Preview of CTLDM8120-M832D PDF

Datasheet Details

Part number: CTLDM8120-M832D
Manufacturer: Central Semiconductor ↗
File Size: 764.41 KB
Datasheet: CTLDM8120-M832D-CentralSemiconductor.pdf
Description: SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor

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