CEM9926A Datasheet, Mosfet, Chino-Excel Technology

CEM9926A Features

• Mosfet 20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is

PDF File Details

Part number:

CEM9926A

Manufacturer:

Chino-Excel Technology

File Size:

407.07kb

Download:

📄 Datasheet

Description:

Dual n-channel mosfet.

TAGS

CEM9926A

Chino-Excel Technology

📁 Related Datasheet

CEM9926 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEM9925 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEM9935 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEM9935A - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) =.

CEM9936 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEM9936A - Dual N-Channel MOSFET (Chino-Excel Technology)
CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.4A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high.

CEM9939 - Dual Enhancement Mode Field Effect Transistor(N and P Channel) (Chino-Excel Technology)
CEM9939 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0.

CEM9939A - Dual-Channel MOSFET (CET)
CEM9939A Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -3.

CEM9945 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEM9947 - Dual P-Channel Enhancement Mode MOSFET (Chino-Excel Technology)
.