CEM9935A Features
* 20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2 AB
CEM9935A-Chino-ExcelTechnology.pdf
Datasheet Details
CEM9935A, CEM9935A-Chino
Chino-Excel Technology
261.34 KB
Dual n-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEM9935A, CEM9935A-Chino.
Please refer to the document for exact specifications by model.
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