CEM9939, CEM9939_Chino Datasheet - Chino-Excel Technology

CEM9939 Dual Enhancement Mode Field Effect Transistor(N and P Channel)

CEM9939 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 ID=250 A 5 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variationwith Temperature VGS, Gate to Source Voltage (V) 13.0 20.0 9.0 7.0 5.0 VDS=15V 2.

CEM9939_Chino-ExcelTechnology.pdf

CEM9939 Datasheet Preview — This datasheet PDF includes multiple part numbers: CEM9939, CEM9939_Chino. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CEM9939, CEM9939_Chino

Manufacturer:

Chino-Excel Technology

File Size:

754.85 KB

Description:

Dual enhancement mode field effect transistor(n and p channel).

Note:

This datasheet PDF includes multiple part numbers: CEM9939, CEM9939_Chino.
Please refer to the document for exact specifications by model.

CEM9939 Distributor

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TAGS

CEM9939 CEM9939_Chino Dual Enhancement Mode Field Effect TransistorN and Channel Chino-Excel Technology