Datasheet4U Logo Datasheet4U.com

CEM9939, CEM9939_Chino Dual Enhancement Mode Field Effect Transistor(N and P Channel)

CEM9939 Description

CEM9939 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: CEM9939, CEM9939_Chino. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
CEM9939, CEM9939_Chino
Manufacturer
Chino-Excel Technology
File Size
754.85 KB
Datasheet
CEM9939_Chino-ExcelTechnology.pdf
Description
Dual Enhancement Mode Field Effect Transistor(N and P Channel)
Note
This datasheet PDF includes multiple part numbers: CEM9939, CEM9939_Chino.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • CEM9939A - Dual-Channel MOSFET (CET)
  • CEM9952A - Dual-Channel MOSFET (CET)
  • CEM9407A - P-Channel MOSFET (CET)
  • CEM9430A - P-Channel 20-V MOSFET (VBsemi)
  • CEM9535 - P-Channel MOSFET (CET)
  • CEM-1203 - magnetic buzzer (CUI)
  • CEM0215 - N-Channel MOSFET (CET)
  • CEM0310 - Single N-Channel Enhancement Mode Field Effect Transistor (CET)

📌 All Tags

Chino-Excel Technology CEM9939-like datasheet