CES2323
Chino-Excel Technology
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P-channel mosfet.
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CES2320 - N-Channel MOSFET
(CET)
CES2320
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 5.2A, RDS(ON) = 29mΩ (typ) @VGS = 10V. RDS(ON) = 45mΩ (typ) @VGS = 4.5V.
Hig.
CES2321 - P-Channel MOSFET
(CET)
CES2321
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V.
High dense.
CES2321A - P-Channel MOSFET
(CET)
CES2321A
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.
CES2324 - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 4.2A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. High dense cell design .
CES2301 - P-Channel MOSFET
(CET)
CES2301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V.
High den.
CES2302 - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design.
CES2302 - N-Channel MOSFET
(VBsemi)
CES2302-VB
CES2302-VB Datasheet
N-Channel 20 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 a.
CES2303 - P-Channel MOSFET
(Chino-Excel Technology)
CES2303
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -1.9A, RDS(ON) = 150mΩ (typ) @VGS = -10V. RDS(ON) = 230mΩ (typ) @VGS = -4.5V.
CES2304 - N-Channel MOSFET
(CET)
CES2304
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 2.8A, RDS(ON) = 65mΩ (typ) @VGS = 10V. RDS(ON) = 90mΩ (typ) @VGS = 4.5V.
Hig.
CES2305 - P-Channel MOSFET
(Chino-Excel Technology)
CES2305
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -4A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. RDS(ON) = 120m.