CES2323 - P-Channel MOSFET
CES2323 Features
* -30V, -4.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-
