CEU83A3G Datasheet, Mosfet, Chino-Excel Technology

CEU83A3G Features

  • Mosfet 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product i

PDF File Details

Part number:

CEU83A3G

Manufacturer:

Chino-Excel Technology

File Size:

440.64kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: CEU83A3G 📥 Download PDF (440.64kb)
Page 2 of CEU83A3G Page 3 of CEU83A3G

TAGS

CEU83A3G
N-Channel
MOSFET
Chino-Excel Technology

📁 Related Datasheet

CEU83A3 - N-Channel MOSFET (CET)
CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high .

CEU83A3G - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. Super high dense cell d.

CEU840A - N-Channel MOSFET (CET)
CED840A/CEU840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7.5A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense ce.

CEU840G - N-Channel MOSFET (CET)
CED840G/CEU840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell.

CEU84A4 - N-Channel MOSFET (CET)
CED84A4/CEU84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super.

CEU85A3 - N-Channel MOSFET (CET)
CED85A3/CEU85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high .

CEU01N6 - N-Channel MOSFET (CET)
CED01N6/CEU01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.

CEU01N65 - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS.

CEU01N65A - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(O.

CEU01N6G - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts