500V, 7.5A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
CEU840G, CET
CED840G/CEU840G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
500V, 7A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell.
CEU01N6, CET
CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.
