* VDS = 20V,ID =6A RDS(ON) (Typ.) =16mΩ @ VGS=4.5V RDS(ON) (Typ.) =17mΩ @ VGS=3.8V RDS(ON)(Typ.) =21mΩ @ VGS=2.5V
* High Power and current handing capability
* Lead free product is acquired k
* Surface Mount Package e Applicatio T Battery protection Load switch e Power managemen
MX8205L
ChipSourceTek
782.34 KB
N-channel enhancement mode power mosfet.
MX8205L N-Channel Enhancement Mode Power MOSFET The MX8205L uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper.
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