MXN6545 - P-Channel Enhancement Mode Power MOSFET
MXN6545 Features
* Schematic diagram
* VDS =-30V，ID =-50A
* RDS(ON) (Typ.)= 4.4m Ω @ VGS=-10V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current k Good stability and uniformity with high EAS Excellent package for good heat dissipation e Special process technology
