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MXN2384 Dual N-Channel Power MOSFET

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Description

Dual N-Channel Enhancement Mode Power MOSFET .
The MXN2384 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
MXN2384
Manufacturer
ChipSourceTek
File Size
706.56 KB
Datasheet
MXN2384-ChipSourceTek.pdf
Description
Dual N-Channel Power MOSFET

Features

* Schematic diagram
* VDS =20V,ID =9.5A @VGS=4.5V RDS(ON)(Typ. )=7.8mΩ @VGS=4.2V RDS(ON)(Typ. )=8mΩ @VGS=3.8V RDS(ON)(Typ. )=8.3mΩ @VGS=2.5V RDS(ON)(Typ. )=11mΩ ESD Rating:2000V HBM
* High power and current handing capability k
* Lead free product is acquired
* Surface mount package

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