MXN2386 Datasheet - ChipSourceTek

datasheet Preview Page 1 from Datasheet4u.com

MXN2386 Dual N-Channel Enhancement Mode Power MOSFET

Dual N-Channel Enhancement Mode Power MOSFET .
The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

MXN2386-ChipSourceTek.pdf

MXN2386 Datasheet Preview — Preview of MXN2386 PDF

Datasheet Details

Part number:

MXN2386

Manufacturer:

ChipSourceTek

File Size:

744.18 KB

Description:

Dual N-Channel Enhancement Mode Power MOSFET

Features

* Schematic diagram
* VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ. )=6mΩ @VGS=4.2V RDS(ON)(Typ. )=6.4mΩ @VGS=3.8V RDS(ON)(Typ. )=6.6mΩ @VGS=2.5V RDS(ON)(Typ. )=8.3mΩ ESD Rating:2000V HBM
* High power and current handing capability k
* Lead free product is acquired
* Surface mount package

MXN2386 Distributors

📁 Related Datasheet

MXN13 MXN13FB06A MXN13FB10E MXN13FB12F MXN13FB12K

📌 All Tags

MXN2386 Dual N-Channel Enhancement Mode Power MOSFET ChipSourceTek

ChipSourceTek MXN2386-like datasheet