MXN2386 - Dual N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

Datasheet Details

Part number	MXN2386
Manufacturer	ChipSourceTek
File Size	744.18 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MXN2386-ChipSourceTek.pdf

The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Schematic diagram.
VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ. )=6mΩ @VGS=4.2V RDS(ON)(Typ. )=6.4mΩ @VGS=3.8V RDS(ON)(Typ. )=6.6mΩ @VGS=2.5V RDS(ON)(Typ. )=8.3mΩ ESD Rating:2000V HBM.
High power and current handing capability k.
Lead free product is acquired.
Surface mount package Te.

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Published: Mar 2, 2025 |