MXN2512 - Dual N-Channel Power MOSFET

ChipSourceTek

Datasheet Details

The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Schematic diagram.
VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ. )=7.2mΩ @VGS=4.2V RDS(ON)(Typ. )=7.4mΩ @VGS=3.8V RDS(ON)(Typ. )=8mΩ @VGS=2.5V RDS(ON)(Typ. )=10mΩ ESD Rating: 2000V HBM.
Asvanced trench MOSFET process technology k.
Ultra low on-resistance with low gate charge.
New Thermally Enhanced DFN5X2-6L Package e.

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Published: Jan 7, 2024 |