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2SC2873-G - Transistor

Datasheet Summary

Features

  • - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. Circuit Diagram 1 : BASE 2 :.

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Datasheet Details

Part number 2SC2873-G
Manufacturer Comchip
File Size 161.64 KB
Description Transistor
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Full PDF Text Transcription

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General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. Circuit Diagram 1 : BASE 2 : COLLECTOR 3 : EMITTER 1 Base Collector 2 3 Emitter Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 2 A Collector power dissipation Thermal resistance from junction to ambient PD RθJA 500 mW 250 °C/W Junction temperature Storage temperature TJ 150 °C Tstg -55~+150 °C SOT-89-3L 0.181(4.60) 0.173(4.40) 0.061(1.55) REF. 0.102(2.60) 0.091(2.30) 123 0.167(4.25) 0.155(3.94) 0.020(0.52) 0.013(0.32) 0.060(1.50) TYP. 0.
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