BU806
Comset Semiconductors
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Silicon darlington power transistors.
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BU800 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.
BU801 - High Voltage Fast Darlington
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.
BU806 - 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS
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SEMICONDUCTOR TECHNICAL DATA
Order this document by BU806/D
NPN Darlington Power Transistor
This Darlington transistor is a high voltage, .
BU806 - NPN Darlington Power Transistor
(ON Semiconductor)
ON Semiconductort
NPN Darlington Power Transistor
This Darlington transistor is a high voltage, high speed device for use in horizontal deflection cir.
BU806 - MEDIUM VOLTAGE NPN TRANSISTORS
(ST Microelectronics)
BU806 ® BU807
MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
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s NPN DARLINGTONS
s LOW BASE-DRIV.
BU806 - Transistor
(Fairchild Semiconductor)
BU806/807
BU806/807
High Voltage & Fast Switching Darlington Transistor
• Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPE.
BU806 - Silicon NPN Transistor
(NTE)
BU806 Silicon NPN Transistor Fast Switching Power Darlington TO−220 Type Package
Description:
The BU806 is a silicon epitaxial planer NPN power Darli.
BU806 - NPN SILICON DARLINGTON TRANSISTOR
(Central Semiconductor)
BU806 BU807
NPN SILICON DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are N.
BU806 - Silicon NPN Darlington Power Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU806
DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low S.
BU806 - MEDIUM Voltage & Fast Switching Darlington Transistor
(TGS)
TIGER ELECTRONIC CO.,LTD
MEDIUM Voltage & Fast Switching DarlingtonTransistor
Product specification
BU806
DESCRIPTION
The devices are silicon Epita.
