Description
of read and write modes.
Functional Description[1]
The CY62137CV25/30/33 and CY62137CV are high-performance CMOS static RAMs organized as 128K words by 16 bits.These devices feature advanced circuit design to provide ultra-low active current.This is ideal for providing More Battery
Logic Block Diagram
DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
10
ROW DECODER
128K x 16 RAM Array 2048 x 1024
SENSE AMPS
I/O0
I/O7 I/O8
Features
- Very high speed: 55 ns and 70 ns.
- Voltage range:.
- CY62137CV25: 2.2V.
- 2.7V.
- CY62137CV30: 2.7V.
- 3.3V.
- CY62137CV33: 3.0V.
- 3.6V.
- CY62137CV: 2.7V.
- 3.6V.
- Pin-compatible with the CY62137V.
- Ultra-low active power.
- Typical active current: 1.5 mA @ f = 1 MHz.
- Typical active current: 5.5 mA @ f = fmax (70-ns speed) Low and ultra-low standby power Easy memory expansion with CE and OE featur.