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CY621472GN, CY62147GN - 4-Mbit (256K words x 16 bit) Static RAM

Cypress Semiconductor

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CY621472GN Datasheet Preview — This datasheet PDF includes multiple part numbers: CY621472GN, CY62147GN. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	CY621472GN, CY62147GN
Manufacturer	Cypress Semiconductor
File Size	291.96 KB
Description	4-Mbit (256K words x 16 bit) Static RAM
Datasheet	CY62147GN-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY621472GN, CY62147GN. Please refer to the document for exact specifications by model.

CY621472GN Product details

Description

CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. CE1 as low and CE2 as HIGH.

Features

High speed: 45 ns/55 ns.
Ultra-low standby power.
Typical standby current: 3.5 A.
Maximum standby current: 8.7 A.
Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
1.0-V data retention.
TTL-compatible inputs and outputs.
Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

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Published: Apr 7, 2020 |