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CY621472GN, CY62147GN 4-Mbit (256K words x 16 bit) Static RAM

CY621472GN Description

CY62147GN/CY621472GN MoBL® 4-Mbit (256K words × 16 bit) Static RAM 4-Mbit (256K words × 16 bit) Static RAM .
CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits.

CY621472GN Features

* High speed: 45 ns/55 ns
* Ultra-low standby power
* Typical standby current: 3.5 A
* Maximum standby current: 8.7 A
* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
* 1.0-V data retention
* TTL-compatible inputs and outputs
* Pb-free 48-ball V

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: CY621472GN, CY62147GN. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
CY621472GN, CY62147GN
Manufacturer
Cypress Semiconductor
File Size
291.96 KB
Datasheet
CY62147GN-CypressSemiconductor.pdf
Description
4-Mbit (256K words x 16 bit) Static RAM
Note
This datasheet PDF includes multiple part numbers: CY621472GN, CY62147GN.
Please refer to the document for exact specifications by model.

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📌 All Tags

4-Mbit 256K words bit Static RAM Cypress Semiconductor
Cypress Semiconductor CY621472GN-like datasheet