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CY62157H 8-Mbit (512K words x 16 bit) Static RAM

CY62157H Description

CY62157H MoBL® 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting.
CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code.

CY62157H Features

* Ultra-low standby current
* Typical standby current: 5.5A
* Maximum standby current: 16 A
* High speed: 45 ns
* Voltage range: 2.2 V to 3.6 V
* Embedded Error-Correcting Code (ECC) for single-bit error correction
* 1.0 V data retention
* Transistor-transistor log

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Datasheet Details

Part number
CY62157H
Manufacturer
Cypress Semiconductor
File Size
373.12 KB
Datasheet
CY62157H-CypressSemiconductor.pdf
Description
8-Mbit (512K words x 16 bit) Static RAM

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📌 All Tags

8-Mbit 512K words bit Static RAM Cypress Semiconductor
Cypress Semiconductor CY62157H-like datasheet