Datasheet4U.com

CY62157H - 8-Mbit (512K words x 16 bit) Static RAM

Product Overview

Cypress Semiconductor

📥 Download Datasheet

CY62157H 8-Mbit (512K words x 16 bit) Static RAM by Cypress Semiconductor - Datasheet Preview — Datasheet preview – CY62157H

Datasheet Details

Part number	CY62157H
Manufacturer	Cypress Semiconductor
File Size	373.12 KB
Description	8-Mbit (512K words x 16 bit) Static RAM
Datasheet	CY62157H Datasheet
Additional preview pages of the CY62157H datasheet.

Product details

Description

CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code. CE1 as LOW and CE2 as HIGH.

Features

Ultra-low standby current.
Typical standby current: 5.5A.
Maximum standby current: 16 A.
High speed: 45 ns.
Voltage range: 2.2 V to 3.6 V.
Embedded Error-Correcting Code (ECC) for single-bit error correction.
1.0 V data retention.
Transistor-transistor logic (TTL) compatible inputs and outputs.
Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages Functional.

📁 Similar Datasheet

CY62146DV30 - 4M Bit Static RAM (Cypress)
CY62146G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY62146G-MoBL - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY62146GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY62146GESL - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY62146GN - 4-Mbit (256K x 16) Static RAM (Cypress)
CY62146GSL - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY62148G - ultra-low-power RAM (Infineon)

Other Datasheets by Cypress Semiconductor

CY62157CV25 - 512K x 16 Static RAM
CY62157CV30 - 512K x 16 Static RAM
CY62157CV33 - 512K x 16 Static RAM
CY62157DV18 - 8M (512K x 16) Static RAM
CY62157DV20 - 8M (512K x 16) Static RAM
CY62157DV30 - 8-Mbit (512K x 16) MoBL Static RAM

Published: Mar 14, 2017 |