CY7C1321KV18, CY7C1319KV18 - 18-Mbit DDR II SRAM Four-Word Burst Architecture

Cypress Semiconductor

The CY7C1321KV18 by Cypress Semiconductor is a 18-Mbit DDR II SRAM Four-Word Burst Architecture. Below is the official datasheet preview.

Datasheet Details

Part number	CY7C1321KV18, CY7C1319KV18
Manufacturer	Cypress Semiconductor
File Size	816.04 KB
Description	18-Mbit DDR II SRAM Four-Word Burst Architecture
Datasheet	CY7C1319KV18-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1321KV18, CY7C1319KV18. Please refer to the document for exact specifications by model.
Additional preview pages of the CY7C1321KV18 datasheet.

CY7C1319KV18 and CY7C1321KV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II architecture.

18-Mbit density (1M × 18, 512K × 36).
333-MHz clock for high bandwidth.
Four-word burst for reducing address bus frequency.
Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
Echo clocks (CQ and CQ) simplify data capture in high speed systems.
Synchronous.

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Published: Mar 14, 2017 |