CY7C1382BV25 - 512K x 36 / 1 Mb x 18 Pipelined SRAM

Cypress Semiconductor

CY7C1382BV25 Datasheet Preview — Preview of CY7C1382BV25 PDF

Datasheet Details

Part number	CY7C1382BV25
Manufacturer	Cypress Semiconductor
File Size	649.04 KB
Description	512K x 36 / 1 Mb x 18 Pipelined SRAM
Datasheet	CY7C1382BV25-CypressSemiconductor.pdf

CY7C1382BV25 Product details

Description

The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology.

Features

Fast clock speed: 200,166, 150, 133 MHz.
Provide high-performance 3-1-1-1 access rate.
Fast OE access times: 3.0,3.2, 3.4, 3.8, 4.2 ns.
Optimal for depth expansion.
2.5V (±5%) Operation.
Common data inputs and data outputs.
Byte Write Enable and Global Write control.
Chip enable for address pipeline.
Address, data, and control registers.
Internally self-timed WRITE CYCLE.
Burst control pins (inter.

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Published: Nov 10, 2016 |