CY7C1382BV25 Datasheet (Cypress Semiconductor) - 512K x 36 / 1 Mb x 18 Pipelined SRAM

CY7C1382BV25, 512K x 36 / 1 Mb x 18 Pipelined SRAM

The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology.

Each memory cell consists of six transistors.

The CY7C1382BV25 and CY7C1380BV25 SRAMs integrate 1,048,576x18

CY7C1382BV25 Features

* Fast clock speed: 200,166, 150, 133 MHz

* Provide high-performance 3-1-1-1 access rate

* Fast OE access times: 3.0,3.2, 3.4, 3.8, 4.2 ns

* Optimal for depth expansion

* 2.5V (±5%) Operation

* Common data inputs and data outputs

* Byte Write E