CY7C1382BV25 Datasheet - Cypress Semiconductor

CY7C1382BV25 512K x 36 / 1 Mb x 18 Pipelined SRAM

The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. The CY7C1382BV25 and CY7C1380BV25 SRAMs integrate 1,048,576x18.

CY7C1382BV25 Features

* Fast clock speed: 200,166, 150, 133 MHz

* Provide high-performance 3-1-1-1 access rate

* Fast OE access times: 3.0,3.2, 3.4, 3.8, 4.2 ns

* Optimal for depth expansion

* 2.5V (±5%) Operation

* Common data inputs and data outputs

* Byte Write E

CY7C1382BV25-CypressSemiconductor.pdf

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Datasheet Details

Part number:

CY7C1382BV25

Manufacturer:

Cypress Semiconductor

File Size:

649.04 KB

Description:

512k x 36 / 1 mb x 18 pipelined sram.

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CY7C1382BV25 CY7C1382BV25 512K Pipelined SRAM Cypress Semiconductor

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