* RDS(ON)@VGS=10V, ID=20A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package 80V 58A 9.4A 9.5 mΩ(typ) Symbol MTE013N08E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Informatio
MTE013N08E3 Datasheet (383.53 KB)
MTE013N08E3
Cystech Electonics
383.53 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C161E3 Issued Date : 2016.01.17 Revised Date : 2016.02.19 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOS.
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