MTE013N08E3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE013N08E3
Manufacturer	Cystech Electonics
File Size	383.53 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE013N08E3-CystechElectonics.pdf

RDS(ON)@VGS=10V, ID=20A.
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package 80V 58A 9.4A 9.5 mΩ(typ) Symbol MTE013N08E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE013N08E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and.

📁 MTE013N08E3 Similar Datasheet

MTE030N15RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTE100N10KRH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
MTE1011P - Metal Can Infrarred Emitter (Marktech Corporate)
MTE1040 - INFRARED LED (Marktech Corporate)
MTE1050A - INFRARED LED (Marktech Corporate)
MTE1070A - INFRARED LED (Marktech Corporate)
MTE1080 - INFRARED LED (Marktech Corporate)
MTE108CL - INFRAED EMITTER (Marktech Corporate)

Other Datasheets by Cystech Electonics

Published: Sep 4, 2016 |