MTE013N08E3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C161E3 Issued Date : 2016.01.17 Revised Date : 2016.02.19 Page No.: 1/ 8 N-Channel Enhancement Mode Power MOS.

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Datasheet Specifications

Part number: MTE013N08E3
Manufacturer: Cystech Electonics
File Size: 383.53 KB
Datasheet: MTE013N08E3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)@VGS=10V, ID=20A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package 80V 58A 9.4A 9.5 mΩ(typ) Symbol MTE013N08E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Informatio

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MTE013N08E3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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