MTE013N08E3 Datasheet - Cystech Electonics

MTE013N08E3 N-Channel Enhancement Mode Power MOSFET

MTE013N08E3 Features

* RDS(ON)@VGS=10V, ID=20A

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* RoHS compliant package 80V 58A 9.4A 9.5 mΩ(typ) Symbol MTE013N08E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Informatio

Datasheet Details

MTE013N08E3

Cystech Electonics

383.53 KB

N-channel enhancement mode power mosfet.

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