MTE013N10RJ3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTE013N10RJ3 Spec.No.: C056J3 Issued Date : 2017.04.10 Revised Date : 2020.10.21 .

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Datasheet Specifications

Part number: MTE013N10RJ3
Manufacturer: Cystech Electonics
File Size: 376.80 KB
Datasheet: MTE013N10RJ3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 42A 9A 12.3mΩ(typ) Symbol MTE013N10RJ

MTE013N10RJ3 Distributors

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MTE013N10RJ3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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