* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 42A 9A 12.3mΩ(typ) Symbol MTE013N10RJ
MTE013N10RJ3 Datasheet (376.80 KB)
MTE013N10RJ3
Cystech Electonics
376.80 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE013N10RJ3
Spec. No. : C056J3 Issued Date : 2017.04.10 Revised Date : 2020.10.21 .
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