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MTE013N10RJ3 Datasheet - Cystech Electonics

MTE013N10RJ3 N-Channel Enhancement Mode Power MOSFET

MTE013N10RJ3 Features

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 42A 9A 12.3mΩ(typ) Symbol MTE013N10RJ

MTE013N10RJ3-CystechElectonics.pdf

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Datasheet Details

Part number:

MTE013N10RJ3

Manufacturer:

Cystech Electonics

File Size:

376.80 KB

Description:

N-channel enhancement mode power mosfet.

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MTE013N10RJ3 MTE013N10RJ3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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