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MTE015N15RE3 N-Channel Enhancement Mode Power MOSFET

MTE015N15RE3 Description

CYStech Electronics Corp.Spec.No.: C838E3 Issued Date : 2016.06.13 Revised Date : 2016.06.23 Page No.: 1/8 N-Channel Enhancement Mode Power MOSF.

MTE015N15RE3 Features

* RDS(ON)@VGS=10V, ID=30A
* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 150V 90A 16mΩ (typ) Symbol MTE015N15RE3 Outline TO-220 G：Gate D：Drain

MTE015N15RE3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE015N15RE3 CYStek Product Specification

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Datasheet Details

Part number
MTE015N15RE3
Manufacturer
Cystech Electonics
File Size
317.72 KB
Datasheet
MTE015N15RE3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
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