* BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=30A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Insulating package, front/back side insulating voltage=2500V(AC)
* RoHS compliant package 150V 50A 16 mΩ(typ) Symbol MTE015
MTE015N15RFP Datasheet (496.00 KB)
MTE015N15RFP
Cystech Electonics
496.00 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE015N15RFP
Spec. No. : C838FP Issued Date : 2016.11.21 Revised Date : 2017.01.04 .
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