MTE015N15RFP Datasheet - Cystech Electonics

MTE015N15RFP N-Channel Enhancement Mode Power MOSFET

MTE015N15RFP Features

* BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=30A

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* Insulating package, front/back side insulating voltage=2500V(AC)

* RoHS compliant package 150V 50A 16 mΩ(typ) Symbol MTE015

Datasheet Details

MTE015N15RFP

Cystech Electonics

496.00 KB

N-channel enhancement mode power mosfet.

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