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MTE080A10Q8 Dual N-Channel Enhancement Mode Power MOSFET

MTE080A10Q8 Description

CYStech Electronics Corp.Spec.No.: C871Q8 Issued Date : 2016.11.28 Revised Date : Page No.: 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTE.

MTE080A10Q8 Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Dual N-ch MOSFET package
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2.5A RDSON@VGS=6V, ID=2.0A 100V 2.8A 5.0A 74mΩ(typ)

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Datasheet Details

Part number
MTE080A10Q8
Manufacturer
Cystech Electonics
File Size
402.32 KB
Datasheet
MTE080A10Q8-CystechElectonics.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET Cystech Electonics
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