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MTE080A10Q8 Datasheet - Cystech Electonics

MTE080A10Q8 Dual N-Channel Enhancement Mode Power MOSFET

MTE080A10Q8 Features

* Simple drive requirement

* Low on-resistance

* Fast switching speed

* Dual N-ch MOSFET package

* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2.5A RDSON@VGS=6V, ID=2.0A 100V 2.8A 5.0A 74mΩ(typ)

MTE080A10Q8 Datasheet (402.32 KB)

MTE080A10Q8 Datasheet Preview — Preview of MTE080A10Q8 PDF

Datasheet Details

Part number:

MTE080A10Q8

Manufacturer:

Cystech Electonics

File Size:

402.32 KB

Description:

Dual n-channel enhancement mode power mosfet.

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MTE080A10Q8 Dual N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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