MTE2D4N06F7T - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

MTE2D4N06F7T Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTE2D4N06F7T Spec.No.: C933F7T Issued Date : 2016.12.30 Revised Date : 2017.01.03.

MTE2D4N06F7T Features

* Simple Drive Requirement
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 60V 172A 2.0mΩ Symbol MTE2D4N06F7T Outline TO-263-7L-4C G：Gate D：Drain S：Source Ordering Information Device Package Shipping

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Datasheet Details

Part number: MTE2D4N06F7T
Manufacturer: Cystech Electonics
File Size: 451.04 KB
Datasheet: MTE2D4N06F7T-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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