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2SA950 PNP Transistor

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Description

DC COMPONENTS CO., LTD.R DISCRETE SEMICONDUCTORS 2SA950 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR .
Designed for low-frequency power amplifier applications.

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Datasheet Specifications

Part number
2SA950
Manufacturer
DC COMPONENTS
File Size
213.07 KB
Datasheet
2SA950-DCCOMPONENTS.pdf
Description
PNP Transistor

Applications

* Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -35 -3

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